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IXTH 28N50Q
IXTT 28N50Q
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH) Outline
g fs
V DS = 20 V; I D = 0.5 ? I D25 , pulse test
16
28
S
C iss
C oss
C rss
V GS = 0 V, V DS = 25 V, f = 1 MHz
3300
480
125
pF
pF
pF
1
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
t d(on)
17
ns
t r
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
20
ns
t d(off)
R G
= 2.0 ? (External),
51
ns
Dim.
Millimeter
Inches
t f
Q g(on)
12
94
ns
nC
A
A 1
A 2
Min.
4.7
2.2
2.2
Max.
5.3
2.54
2.6
Min.
.185
.087
.059
Max.
.209
.102
.098
Q gs
Q gd
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
20
42
nC
nC
b
b 1
b 2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
.4
.8
.016
.031
R thJC
0.31
K/W
D
E
20.80
15.75
21.46
16.26
.819
.610
.845
.640
R thCK
(TO-247)
0.25
K/W
e
5.20
5.72
0.205
0.225
L
L1
? P
19.81
3.55
20.32
4.50
3.65
.780
.140
.800
.177
.144
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Q
R
S
5.89
4.32
6.15
6.40
5.49
BSC
0.232
.170
242
0.252
.216
BSC
I S
I SM
V SD
t rr
Q RM
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = I S , -di/dt = 100 A/ μ s, V R = 100 V
500
8.0
28
112
1.5
A
A
V
ns
μ C
TO-268 Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS MOSFETs and IGBTs are covered by one or more
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
of the following U.S. patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
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